The Preparation of Cu(II)- and Ag(I)-responsive Carbon Nanodots from the Right Amino-acid Carbon Source

Journal of Fluorescence - Carbon nanodots (CDs) have exhibited excellent sensing capability for various metal ions. However, it is difficult to determine the selectivity of CDs to metal ions. In...     

Terahertz Dual-Band Near-Zero Effective Index Metamaterial Based on Double-Sided Metal Microstructure

Journal of Russian Laser Research - The zero-refractive-index metamaterials have excellent electromagnetic properties, which provide new ideas and methods to realize the control of electromagnetic...     

On the balanced domination of graphs

Czechoslovak Mathematical Journal - Let G = (VG,EG) be a graph and let NG[υ] denote the closed neighbourhood of a vertex υ in G. A function f: VG ? {?1,0,1} is said to be a...     

Nonlinear compressed sensing-based adaptive modal shapes selection approach for efficient dynamic response analysis of flexible multibody system

Nonlinear Dynamics - The modal truncation is usually used in the dynamic response analysis of flexible multibody systems, in which, appropriate selection of modal shapes is very critical to achieve...     

CdS/Si nanofilm heterojunctions based on amorphous silicon films:Fabrication,structures,and electrical properties

Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction.The CdS/Si nanofilm heterojunctions are fabricated by using the radio frequency magnetron sputtering method to deposit the amorphous silicon nanofilms and Cd S nanofilms on the ITO glass in turn.The relation of current density to applied voltage(I-V)shows the obvious rectification effect.From the analysis of the double logarithm I-V curve it follows that below~2.73 V the electron behaviors obey the Ohmic mechanism and above~2.73 V the electron behaviors conform to the space charge limited current(SCLC)mechanism.In the SCLC region part of the traps between the Fermi level and conduction band are occupied,and with the increase of voltage most of the traps are occupied.It is believed that Cd S/Si nanofilm heterojunction is a potential candidate in the field of nano electronic and optoelectronic devices by optimizing its fabricating procedure.     

硅和锗纳米线的原子排布和电荷分布的密度泛函紧束缚方法研究

低维硅锗材料是制备纳米电子器件的重要候选材料，是研发高效率、低能耗和超高速新一代纳米电子器件的基础材料之一，有着潜在的应用价值。采用密度泛函紧束缚方法分别对厚度相同、宽度在0.272 nm~0.554 nm之间的硅纳米线和宽度在0.283 nm~0.567 nm之间的锗纳米线的原子排布和电荷分布进行了计算研究。硅、锗纳米线宽度的改变使原子排布，纳米线的原子间键长和键角发生明显改变。纳米线表层结构的改变对各层内的电荷分布产生重要影响。纳米线中各原子的电荷转移量与该原子在表层内的位置相关。纳米线的尺寸和表层内原子排列结构对体系的稳定性产生重要影响。     

Nonlinear vibration response of a complex aeroengine under the rubbing fault

Nonlinear Dynamics - Rolling bearing and squeeze film damper will introduce structural nonlinearity into the dynamic model of aeroengine. Rubbing will occur due to the clearance reduction design of...     

Numerical Investigation of Thermally Developing Non-Darcy Forced Convection in a Porous Circular Duct with Asymmetric Entrance Temperature Under LTNE Condition

Transport in Porous Media - This paper numerically investigates the heat transfer performance of thermally developing non-Darcy forced convection in a fluid-saturated porous medium tube under...